Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 10, Pages 5788-5796Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am5086484
Keywords
BiVO4; Si; heterojunction; TiO2; dual absorber; onset potential
Funding
- Korea Institute of Science and Technology (KIST)
- Korea Center for Artificial Photosynthesis (KCAP) located in Sogang University - Minister of Science, ICT and Future Planning (MSIP) through the National Research Foundation of Korea [2014M1A2A2070004]
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2014R1A2A1A11050637]
- National Research Foundation of Korea [2014R1A2A1A11050637] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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BiVO4 has been formed into heterojutictions with other metal. oxide semiconductors to increase the efficiency- for solar water oxidation. Here, we suggest that heterojunetion photoanodes of Si and BiVO4 can also increase the efficiency of charge separation and reduce the onset potential of the photocurrent by utilizing the high conduction band edge, potential of Si in a dual-absorber system. We found that a thin TiO2 interlayer is required in-this strucutre to realize 0 2 ma/ suggested photocurrent density enhancement and shifts in onset potential. Si/TiO2/BiVO4 photoandoes showed 1.0-MA/cm(2) at 1.23 V versus the reversible hydrogen electrode (RUE) With 0.11 y (vs RHE) of onset potential, which were a 3.3-fold photocurrent density enhancement and a negative shift in onset potential BiVO4 phutoanodes,
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