Journal
NANO RESEARCH
Volume 11, Issue 6, Pages 3116-3121Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-017-1913-8
Keywords
topological Hall effect; CrTe films; skyrmion phase; molecular beam epitaxy
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Funding
- National Natural Science Foundation of China [51561145005, 11427903]
- National Key R&D Program of China [2017YFA0206200, 2016YFA0302300]
- 1000-Youth talent program of China
- State Key Laboratory of Low-Dimensional Quantum Physics
- Beijing Advanced Innovation Center for Future Chip (ICFC)
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We have studied the magnetic and electrical transport properties of epitaxial NiAs-type CrTe thin films grown on SrTiO3(111) substrates. Unlike rectangle hysteresis loops obtained from magnetic measurements, we have identified intriguing extra bump/dip features from anomalous Hall experiments on the films with thicknesses less than 12 nm. This observed Hall anomaly is phenomenologically consistent with the occurrence of a topological Hall effect(THE) in chiral magnets with a skyrmion phase. Furthermore, the THE contribution can be tuned by the film thickness, showing the key contribution of asymmetric interfaces in stabilizing N,el-type skyrmions. Our work demonstrates that a CrTe thin film on SrTiO3(111) substrates is a good material candidate for studying real-space topological transport.
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