Journal
NANO RESEARCH
Volume 11, Issue 9, Pages 4923-4930Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-018-2087-8
Keywords
nitrogen-doped; tungsten diselenide; n-type doping; ammonia plasma; anion vacancy
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Funding
- National Program for Thousand Young Talents of China
- National Natural Science Foundation of China [51773041, 21603038, 21544001]
- Shanghai Committee of Science and Technology in China [18ZR1404900]
- Fudan University
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To facilitate potential applications of tungsten diselenide (WSe2) in electronics, controllable doping is of great importance. As an industrially compatible technology, plasma treatment has been used to dope two-dimensional (2D) materials. However, owing to the strong etching effect in transition metal dichalcogenides (TMDCs), it is difficult to controllably dope 2D WSe2 crystals by plasma. Herein, we develop a moderate ammonia plasma treatment method to prepare nitrogen-doped WSe2 with controlled nitrogen content. Interestingly, Raman, photoluminescence, X-ray photoelectron spectroscopy, and electrical measurements reveal abnormal n-doping behavior of nitrogen-doped WSe2, which is attributed to selenium anion vacancy introduced by hydrogen species in ammonia plasma. Nitrogen-doped WSe2 with abnormal n-doping behavior has potential applications in future TMDCs-based electronics.
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