Journal
NANO LETTERS
Volume 18, Issue 2, Pages 1253-1258Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b04852
Keywords
2D materials; In2Se3; ferroelectric; semiconductor; switchable diode
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Funding
- King Abdullah University of Science and Technology (Saudi Arabia)
- Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-5C0014430]
- Irvine Materials Research Institute (IMRI)
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Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered alpha-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically inter correlated out-of-plane and in-plane polarization, where the reversal. of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (similar to 1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory, device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
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