Journal
NANO LETTERS
Volume 18, Issue 5, Pages 3125-3131Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b00683
Keywords
Ferromagnetism; 2D van der Waals magnet; molecular beam epitaxy; transition metal dichalcogenide
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Funding
- US Department of Energy [DE-SC0018172]
- National Science Foundation [DMR-1429143]
- Army Research Office [W911NF-14-1-0457]
- GEM National Consortium Ph.D. Fellowship
- Ohio State University Materials Research Seed Grant Program - Center for Emergent Materials, an NSF-MRSEC [DMR-1420451]
- Center for Exploration of Novel Complex Materials
- Institute for Materials Research
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Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSex) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that, in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe2) monolayer, while for thicker films it could originate from a combination of vdW MnSe2 and/or interfacial magnetism of alpha-MnSe(111). Magnetization measurements of monolayer MnSe x films on GaSe and SnSe2 epilayers show ferromagnetic ordering with a large saturation magnetization of similar to 4 Bohr magnetons per Mn, which is consistent with the density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe2. Growing MnSex films on GaSe up to a high thickness (similar to 40 nm) produces alpha-MnSe(111) and an enhanced magnetic moment (similar to 2x) compared to the monolayer MnSe x samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveals an abrupt and clean interface between GaSe(0001) and alpha-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe2 monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.
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