Journal
NANO LETTERS
Volume 18, Issue 7, Pages 4473-4481Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01614
Keywords
Electron waveguide; LaAlO3/SrTiO3; ballistic transport; electron pairing
Categories
Funding
- Vannevar Bush Faculty Fellowship ONR [N00014-15-1-2847]
- DOE [DE-SC0014417]
- NSF [DMR_1609519]
- AFOSR [FA9550-15-1-0334]
- AOARD [FA2386-15-1-4046]
- 1000 Talents Program for Young Scholars
- [DMR-1629270]
- U.S. Department of Energy (DOE) [DE-SC0014417] Funding Source: U.S. Department of Energy (DOE)
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SrTiO3-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that the 2D LaAlO3/SrTiO3 interface can support quantized ballistic transport of electrons and (nonsuperconducting) electron pairs within quasi-1D structures that are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique. The nature of transport ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest e(2)/h plateau indicate a ballistic mean-free path l(MF) similar to 20 mu m, more than 2 orders of magnitude larger than for 2D LaAlO3/SrTiO3 heterostructures. Nonsuperconducting electron pairs are found to be stable in magnetic fields as high as B = 11 T and propagate ballistically with conductance quantized at 2e(2)/h. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO3/SrTiO3 system and offers a new platform for the study of strongly interacting 1D electronic systems.
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