Journal
NANO LETTERS
Volume 18, Issue 6, Pages 4046-4052Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01739
Keywords
Diamond; near-surface nitrogen-vacancy centers; charge dynamics
Categories
Funding
- National Science Foundation [NSF-1619896, NSF-1401632]
- Research Corporation for Science Advancement through a FRED Award
- NSF CREST-IDEALS, NSF Grant [HRD-1547830]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [1401632] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Physics [1619896] Funding Source: National Science Foundation
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Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond surface. Using multicolor confocal microscopy, here we show that near-surface point defects arising from high-density ion implantation dramatically increase the ionization and recombination rates of shallow NVs compared to those in bulk diamond. Further, we find that these rates grow linearly, not quadratically, with laser intensity, indicative of single-photon processes enabled by NV state mixing with other defect states. Accompanying these findings, we observe NV ionization and recombination in the dark, likely the result of charge transfer to neighboring traps. Despite the altered charge dynamics, we show that one can imprint rewritable, long-lasting patterns of charged-initialized, near-surface NVs over large areas, an ability that could be exploited for electrochemical biosensing or to optically store digital data sets with subdiffraction resolution.
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