Journal
NANO LETTERS
Volume 18, Issue 4, Pages 2666-2671Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b00554
Keywords
InAs; nanowires; GaAs; nanoscale membranes; template-assisted; weak localization
Categories
Funding
- NCCR QSIT
- SNF [IZLRZ2-163861]
- H2020 via the ITN project INDEED
- Swiss NSF
- Swiss Nanoscience Institute SNI
- Programa Internacional de Becas la Caixa-Severo Ochoa
- Generalitat de Catalunya [2017 SGR 327]
- Spanish MINECO coordinated project ValPEC [ENE2017-85087-C3]
- Severo Ochoa Programme (MINECO) [SEV-2013-0295]
- CERCA Programme/Generalitat de Catalunya
- European Union's Horizon Research and Innovation Programme [654360]
- Ministry of Education and Science of the Russian Federation [14-613-21-0055, RFMEFI61316 x 0055]
- NSF [DMR-1611341]
- NSF GRFP
- NSF-MRJ [DMR-0420532]
- ONR-DURIP [N00014-0400798, N00014-0610539, N00014-0910781, N00014-1712870]
- MRSEC program at the Materials Research Center [NSF DMR-1720139]
- SHyNE Resource [NSF ECCS-1542205]
- Initiative for Sustainability and Energy (ISEN) at Northwestern University
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Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.
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