Journal
NANO LETTERS
Volume 18, Issue 4, Pages 2304-2310Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b05015
Keywords
Nanowire laser; GaAsSb; superlattice; molecular beam epitaxy
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Funding
- FRINATEK program of the Research Council of Norway [214235]
- NANO program of the Research Council of Norway [239206]
- Research Council of Norway [197411, 197405, FORSKERSKOLER-221860]
- Swedish Research Council (VR)
- Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation (KAW)
- NanoLund
- China Scholarship Council (CSC) [201306070023]
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Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of similar to 6 kW/cm(2) (75 mu J/cm(2) per pulse), a lasing quality factor as high as 1250, and a high characteristic temperature of similar to 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way toward future nanoscale integrated optoelectronic systems with superior performance.
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