Journal
NANO LETTERS
Volume 18, Issue 2, Pages 1421-1427Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b05177
Keywords
Self-aligned; 2D material; van der Waals heterojunction; source-gated transistor; antiambipolar
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Funding
- 2-DARE program [NSF EFRI-1433510]
- Materials Research Science and Engineering Center (MRSEC) of Northwestern University [NSF DMR-1720139]
- National Institute of Standards and Technology [NIST CHiMaD 70NANB14H012]
- ONR DURIP Grant [ONR N00014-16-1-3179]
- NSERC Postgraduate Scholarship-Doctoral Program
- National Science Foundation Graduate Research Fellowship
- Deutsche Forschungsgemeinschaft [HE 7999/1-1]
- Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF ECCS-1542205]
- Materials Research Science and Engineering Center [NSF DMR-1720139]
- State of Illinois
- Northwestern University
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A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nth. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 rim using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
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