Journal
MRS BULLETIN
Volume 43, Issue 5, Pages 340-346Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2018.92
Keywords
microelectronics; electronic material; ferroelectric; memory
Funding
- EFRE Fund of the European Commission within the scope of technology development
- Free State of Saxony (Germany)
- German Research Foundation (Deutsche Forschungsgemeinschaft) [MI 1247/11-2]
- Humboldt Postdoctoral Fellowship from the Alexander von Humboldt Foundation
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Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in CMOS processes. Ferroelectricity in Si-doped hafnia was first reported in 2011, and this has revived interest in using ferroelectric memories for various applications. Ferroelectric hafnia with matured atomic layer deposition techniques is compatible with three-dimensional capacitors and can solve the scaling limitations in 1-transistor-1-capacitor (1T-1C) ferroelectric random-access memories (FeRAMs). For ferroelectric field-effect-transistors (FeFETs), the low permittivity and high coercive field E-c of hafnia ferroelectrics are beneficial. The much higher E-c of ferroelectric hafnia, however, makes high endurance a challenge. This article summarizes the current status of ferroelectricity in hafnia and explains how major issues of 1T-1C FeRAMs and FeFETs can be solved using this material system.
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