Quantum, normal and anomalous Hall effect in 2D ferromagnetic structures: GaAs/InGaAs/GaAs quantum well with remote Mn delta-layer

We study experimentally the electronic transport and magnetism of GaAs/InGaAs/GaAs quantum wells (QW) with remote Mn delta-layer. The 2D energy spectrum of the carriers is revealed by quantum Hall Effect measurements. The ferromagnetic ordering is evidenced by anomalous Hall Effect and direct magnetization measurements. A signature of this state is also observed on the temperature dependence of the sample resistance. The dependence of the Curie temperature, T-C, on manganese content, quantum well depth, and on the spacer thickness between QW and Mn delta-layer shed light on the mechanisms of exchange interaction in such structures.