Journal
MICROELECTRONIC ENGINEERING
Volume 192, Issue -, Pages 19-24Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2018.01.027
Keywords
Grating-based X-ray interferometry; Deep reactive ion etching of silicon; Atomic layer deposition of iridium
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Funding
- Swiss National Science Foundation, SNSF [159263]
- [ERC-2012-SRG 310005-PhaseX]
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X-ray grating interferometry is an excellent technique for X-ray phase contrast imaging and X-ray wavefront sensing with applications in materials science, biology and medical diagnosis. Among other requirements, the method depends on the availability of highly X-ray absorbing metallic gratings. Here, we report on the fabrication and characterization of high aspect ratio iridium gratings with a period of 1 mu m and a depth of 30 mu m combining deep reactive ion etching of silicon and atomic layer deposition of iridium. The implementation of such structures can greatly enhance the sensitivity of grating-based X-ray phase contrast imaging and thus, expand further its broad range of applications. (C) 2018 Elsevier B.V. All rights reserved.
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