Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 81, Issue -, Pages 54-59Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2018.03.014
Keywords
(Cu1-xAgx)(2)ZnSn(S,Se)(4); Thin films; Kesterite; Optical band gap; Electrical property
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Funding
- National Natural Science Foundation of China [61774075, 11274135, 61604029, 61505067]
- Science and Technology Development Project of Jilin Province [20170101142JC]
- Specialized Research Fund for the Doctoral Program of Higher Education [20130061130011]
- Ph.D. Programs Foundation of Ministry of Education of China [20120061120011]
- High Performance Computing Center of Jilin University, China
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We fabricated the (Cu1-xAgx)(2)ZnSn(S,Se)(4) (CAZTSSe) (0 <= x <= 0.25) alloy thin films by a simple solution approach combined with a post-selenization technique, and investigated the influence of Ag contents on structure, morphology, band gap as well as electrical property of CZTSSe thin films. The results showed that Cu+ cation in Cu2ZnSn(S,Se)(4) (CZTSSe) films was replaced by Ag+ cation, forming homogeneous CAZTSSe (0 <= x <= 0.25) alloy thin films. The crystal structure and the band gap of CAZTSSe (0 <= x <= 0.25) alloy thin films are influenced by Ag/(Cu+Ag) ratios. The incorporation of Ag is found to accelerate the grain growth and increase the grain size. The optical band gap of CAZTSSe alloy thin films can be continuously tuned in the range of as Ag content from x = 0 to x = 0.15. Furthermore, Hall measurement results indicate that all CAZTSSe alloy thin films showed p-type conductivity and hole concentration decreased with the increasing the Ag contents.
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