Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 75, Issue -, Pages 183-192Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.11.043
Keywords
SiC; g-C3N4; Heterojunction; Photocatalysis; Active radicals; Mechanism
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Funding
- National Natural Science Foundation of China [21207089]
- Natural Science Foundation of Shanghai [17ZR1419200]
- SRF for ROCS, SEM.
- science and technology development project of University of Shanghai for Science and Technology [2017KJFZ073]
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Novel visible-light-driven silicon carbide (SiC)/g-C3N4 heterojuncted composites were successfully prepared via a facile ultrasonic dispersion and calcination method, and afterwards characterized by a couple of technologies including XRD, SEM, TEM, FT-IR, XPS, UV-vis DRS, PL spectra, and N-2 adsorption-desorption. It was found that SiC nanoparticles were uniformly deposited over the surface of g-C3N4 to create heterojunction domains along phase interface boundary, favoring charge carriers transfer and separation across the straddling band alignments. Besides, the visible-light absorption capability of samples was enhanced by the incorporation of SiC. These physiochemical merits ensured the improved photocatalytic performance of heterojuncted composites over the degradation of dyes rhodamine B (RhB) and methyl orange (MO) in comparison to each single component SiC or g-C3N4. Upon an identical condition, the sample SN8 exhibited the highest photocatalytic ability among all tested samples. According to active species trapping measurements, center dot OH and center dot O-2(-) were deemed as major radicals and eventually a possible photocatalysis mechanism was speculated.
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