Recent advances in diamond power semiconductor devices

Diamond is known as an ultimate material because of its superior properties and it is expected to be employed in next-generation power electronic devices. Progress in epitaxial growth and fabrication techniques such as p- and n-type doping control with low compensation and surface treatment have improved the performance of power devices. High forward-current density and long-term stability have been achieved for Schottky barrier diodes operating at 400 degrees C. Fast turn-off operation with low loss and a high blocking capability of > 10 kV have also been realized. In addition, high blocking voltages of more than 2 kV have been achieved for switching devices such as metal-semiconductor field-effect transistors (MESFETs) and metal-oxide semiconductor FETs. To maximize device performance up to the material limit requires the development of fabrication techniques such as selective area doping, lithography, etching, formation of diamond/oxide interfaces and also defect reduction. Here, the current status of semiconductor diamond technology is reviewed.