Journal
MATERIALS RESEARCH BULLETIN
Volume 105, Issue -, Pages 28-35Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2018.02.027
Keywords
hBN-MoS2; QDs nanocomposite; Quantum dots; Flexible memory; 2D nanocomposite; All-printed
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Funding
- Global Leading Technology Program - Ministry of Trade, Industry and Energy, Republic of Korea [10042477]
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In this study, we have proposed a flexible, rewritable and nonvolatile memory device based on an advanced 2D nanocomposite of hexagonal boron nitride (hBN) flakes and molybdenum disulfide quantum dots (MoS2 QDs). Complete device fabrication was carried out by using extremely simple and highly controllable all printed technology. The electrical characteristics exhibited by the as developed memory devices included the switching ratio, electrical endurance and retention time of similar to 10(3), 10(3) and 10(4) respectively. The device turned ON and OFF at the SET and RESET threshold voltages of + 1.4 V and -1 V respectively. The obtained results of electrical and thermal characterizations exhibited that the switching ratio decreases via either increasing temperature (300 K-380 K) or device size (42 mu m-100 mu m) hence verifying the formation of conductive filament through the functional layer. Moreover, no major degradation in the switching characteristics was observed even after 1500 bending cycles.
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