4.6 Article

Effect of Rb doping on modulating grain shape and semiconductor properties of MAPbI(3) perovskite layer

Journal

MATERIALS LETTERS
Volume 211, Issue -, Pages 328-330

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2017.10.025

Keywords

Crystal structure; Semiconductors; Nanocrystalline materials; Solar energy materials; Perovskite

Funding

  1. Natural Science Foundation of China [61376057]
  2. Natural Science Foundation of Beijing [Z160002]
  3. State Key Laboratory on Integrated Optoelectronics [IOSKL2016KF19]
  4. Beijing Key Laboratory for Sensors of BISTU [KF20171077203]
  5. Science & Technology Innovation Projects of Master Graduate & Bachelor Student at BISTU

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In this paper, a novel morphology transformation of MAPbI(3) films which were doped with Rb and prepared by spin coating on a mp-TiO2/bl-TiO2/FTO substrate was demonstrated. A slight blue shift of the PL peak for MAPbI(3) with increase in RbI concentration was shown. The electronic properties of perovskite films, especially, conductivity type could be significantly tuned from n-type to p-type by doping with Rb. Carrier concentration and mobility could be controlled by adjusting dopant concentration. The investigation of the semiconductor properties of perovskite may shine light on future rational design of novel and more efficient perovskite solar cells. (C) 2017 Elsevier B.V. All rights reserved.

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