Journal
MATERIALS LETTERS
Volume 225, Issue -, Pages 29-32Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2018.04.049
Keywords
VO2(B); Temperature-coefficient of resistance (TCR); Anisotropy
Funding
- National Natural Science Foundation of China [11574119]
- Guangzhou science and technology project [201804010143]
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Vanadium oxide is a type of material with high temperature coefficient of resistance (TCR) for bolometric infrared detection. In this letter, the effects of growth conditions of B-phase crystalline VO2, including reaction temperature, reaction time and quantities of precursors, were systematically investigated. Free-standing VO2(B) thin film composed of nano-sheets stacking on the (0 0 1) plane was prepared. The in-plane and out-of-plane TCRs were measured. A superior in-plane TCR of -3.0%/K was observed at room temperature, while the out-of-plane TCR only was -1.7%/K. We further showed that the I-V behavior of VO2(B) was voltage-dependent, and its possible origin was discussed. (C) 2018 Published by Elsevier B.V.
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