Journal
MATERIALS LETTERS
Volume 221, Issue -, Pages 22-25Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2018.03.056
Keywords
Cr doping; CZTS; Sputtering; Defects; Optoelectronic
Funding
- Ministry of Higher Education of Malaysia (MOHE) [FRGS/1/2014/TK06/UKM/01/1]
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In this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 mu m was observed for the doped sample. Bandgap was found to vary (1.51-1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20-0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. (C) 2018 Elsevier B.V. All rights reserved.
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