Journal
OPTICS EXPRESS
Volume 21, Issue 23, Pages 28072-28082Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.21.028072
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- Italian Ministry of University and Research [PON PANDION 01_00375]
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Design, fabrication, and characterization of an asymmetric metal-semiconductor-metal photodetector, based on internal photoemission effect and integrated into a silicon-on-insulator waveguide, are reported. For this photodetector, a responsivity of 4.5 mA/W has been measured at 1550 nm, making it suitable for power monitoring applications. Because the absorbing metal is deposited strictly around the vertical output facet of the waveguide, a very small contact area of about 3 mu m(2) is obtained and a transit-time-limited bandwidth of about 1 GHz is demonstrated. Taking advantage of this small area and electrode asymmetry, a significant reduction in the dark current (2.2 nA at -21 V) is achieved. Interestingly, applying reverse voltage, the photodetector is able to tune its cut-off wavelength, extending its range of application into the MID infrared regime. (C) 2013 Optical Society of America
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