A CMOS Compatible, Forming Free TaOx ReRAM

Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance nonvolatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x10(5) cycle endurance.