Journal
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3
Volume 58, Issue 4, Pages 87-93Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/05804.0087ecst
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A brief review of the key results and issues regarding the threshold-voltage instability effect in SiC MOSFETs is presented. These include the basic effect, the strong dependence on measurement conditions, the effect of high-temperature bias stressing, and the implications for reliability testing.
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