Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 72, Issue 8, Pages 939-942Publisher
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.72.939
Keywords
Laser annealing; Low-temperature poly-silicon; Crystallization; Blue laser
Categories
Funding
- Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2015M3A7B7045490]
- Industrial Strategic Technology Developments Program - Ministry of Knowledge Economy, Korea Evaluation Institute of Industrial Technology (MKE/KEIT) [10052804]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10052804] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.
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