Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 38, Issue 2, Pages 445-452Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2017.09.011
Keywords
Silicon carbide; Mechanical properties; Thermal conductivity; Microstructure; Process-tolerant behavior
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Funding
- National Research Foundation of Korea (NRF) - Korea Government (MSIP) [2015R1A2A2A01004860]
- National Research Foundation of Korea [2015R1A2A2A01004860] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Process-tolerant SiC ceramics were prepared by pressureless sintering at 1850-1950 degrees C for 2 h in an argon atmosphere with a new quaternary additive (Al2O3-Y2O3-CaO-SrO). The SiC ceramics can be sintered to a > 94% theoretical density at 1800-1950 degrees C by pressureless sintering. Toughened microstructures consisting of relatively large platelet grains and small equiaxed grains were obtained when SiC ceramics were sintered at 1850-1950 degrees C. The presently fabricated SiC ceramics showed little variability of the microstructure and mechanical properties with sintering within the temperature range of 1850-1950 degrees C, demonstrating process-tolerant behavior. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature from 1800 degrees C to 1900 degrees C due to decreases of the lattice oxygen content of the SiC grains and residual porosity. The flexural strength, fracture toughness, and thermal conductivity of the SiC ceramics sintered at 1850-1950 degrees C were in the ranges of 444-457 MPa, 4.9-5.0 MPa m(1/2), and 76-82 Wm(-1) K-1 respectively.
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