Journal
PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013)
Volume 38, Issue -, Pages 250-253Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2013.07.274
Keywords
Laser doping; boron emitter; n-type; back junction; high efficiency; IBC
Funding
- German Federal Ministry for Environment
- Nature Conservation
- Nuclear Safety (BMU) [327519]
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We present the first laser doped interdigitated back contacted solar cells with efficiency eta = 22.0%. The cell area is 2 x 2 cm(2), and contains the metallization of both busbars. The high flexibility and spatial resolution of our laser doping process enables local n-type and p-type doping with a precision below 30 mu m and avoids any masking process. (C) 2013 The Authors. Published by Elsevier Ltd.
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