Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 140, Issue 6, Pages 2186-2195Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jacs.7b11224
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Funding
- Ministry of Economy, Trade and Industry (METI), Japan
- DOD-ONR [N000141310635, N000141512266]
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High-performance thermoelectric bulk sulfide with the colusite structure is achieved by controlling the densification process and forming short-to-medium range structural defects. A simple and powerful way to adjust. carrier concentration combined with enhanced phonon scattering through point defects and, disordered regions is described. By combining experiments with band structure and phonons calculations, we elucidate, for the first time, the underlying Mechanism at the origin, of intrinsically low thermal conductivity in colusite samples as well as the effect of S vacancies and antisite defects on the carrier concentration. Our approach provides a controlled and scalable method to engineer high power factors and remarkable figures of merit near the unity in complex bulk sulfide such. as Cu26V2Sn6S32 colusites.
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