Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 51, Issue 37, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aad4e8
Keywords
MoS2; 2D materials; GaN; heterojunctions; photodetector
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Funding
- Department of Science and Engineering Research Board (SERB) [SERB/F/2236/2015-16]
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Layered transition metal dichalcogenide materials grown over a conventional 3D semiconductor substrate have ignited a spark of interest in the electronics industry. The integration of these 2D layered materials extensively addresses the formidable challenges faced by a new generation of opto-electronic and photovoltaic devices. Herein, we have demonstrated a 2D/3D heterojunction type photodetector by depositing MoS2 on a GaN substrate with a mass-scalable sputtering method. Spectroscopic and microscopic characterizations expose the signature of the highly crystalline, homogeneous and controlled growth of a deposited few-layer MoS2 film. The greater light absorption of few-layer MoS2 results in the high performance of the MoS2/GaN photodetector. Our device shows high external spectral responsivity (similar to 10(3) A W-1) and detectivity (similar to 10(11) Jones) with a very fast response time (similar to 5ms). Our obtained results are significantly better than previous MoS2- and GaN-based photodetectors. This work unveils a new perspective in MoS2/GaN heterojunctions for high-performance optoelectronic applications.
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