Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 51, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aaa1b9
Keywords
selector-less; resistive switching; silicon dioxide; nonlinear
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Funding
- Ministry of Education (Taiwan)
- National Research Foundation of Korea [21A20131600002] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfOx/SiOx-based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfOx/SiOx structure. The stacking HfOx/SiOx-based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of similar to 1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.
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