Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 51, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aaa8d4
Keywords
reactive DC magnetron sputtering; ellipsometric-spectroscopy; plasma spectroscopy; silicon nitride
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Funding
- National Council of Science and Technology of Mexico, CONACyT (Catedras CONACyT) [1081, CB-2015-254494, CB-2015-255156, CB-2015, 255156]
- CONACyT
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In this work, we present a thorough study on the relation between the plasma emission and the change of the silicon nitride thin films refractive index. Thin films were grown by reactive magnetron direct current sputtering technique and deposited onto silicon wafers at different fluxes of Ar and N-2 and at different working pressures. This procedure, at certain deposition parameters, produced poor quality films, i.e. films with refractive index other than pure Si3N4 films. The emission of the plasma was interrogated in real time by means of optical emission spectroscopy (OES) observing at the vicinity of the trget location. In addition, optical properties of the films were measured by in situ ellipsometric-spectroscopy and then correlated with OES observations. Changes in the film refractive index could be deduced from changes in plasma emission applying a principal component analysis.
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