Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 51, Issue 20, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aaba6b
Keywords
ferroelectric heterostructures; tunability; depletion layer width; semiconducting electrode
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Funding
- Chinese Academy of Sciences
- National Natural Science Foundation of China [51172238]
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Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.
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