Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 9, Issue 7, Pages 1703-1711Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.7b03054
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Funding
- Light-Material Interactions in Energy Conversion, an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-05CH11231]
- EFRC at Caltech [DE-SC0001293]
- Kavli Energy NanoScience Institute Heising-Simons Junior Fellowship of the University of California, Berkeley
- Winton Programme for the Physics of Sustainability, from the University of Cambridge
- National Science Foundation Graduate Research Fellowship Program [DGE 1106400]
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Lead halide materials have seen a recent surge of interest from the photovoltaics community following the observation of surprisingly high photovoltaic performance, with optoelectronic properties similar to GaAs. This begs the question: What is the limit for the efficiency of these materials? It has been known that under 1-sun illumination the efficiency limit of crystalline silicon is similar to 29%, despite the Shockley-Queisser (SQ) limit for its bandgap being similar to 33%: the discrepancy is due to strong Auger recombination. In this article, we show that methyl ammonium lead iodide (MAPbI(3)) likewise has a larger than expected Auger coefficient. Auger nonradiative recombination decreases the theoretical external luminescence efficiency to similar to 95% at open-circuit conditions. The Auger penalty is much reduced at the operating point where the carrier density is less, producing an oddly high fill factor of similar to 90.4%. This compensates the Auger penalty and leads to a power conversion efficiency of 30.5%, close to ideal for the MAPbI(3) bandgap.
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