Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 9, Issue 12, Pages 3167-3172Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.8b01155
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Funding
- Research Council of Lithuania [S-MIP-17-71]
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, under JST ERATO, Japan [JPMJER1305]
- International Institute for Carbon Neutral Energy Research (WPI-I2CNER) - Ministry of Education, Culture, Sports, Science and Technology (MEXT), JSPS KAKENHI [JP15K14149, JP16H04192]
- Canon Foundation
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Carrier mobility is one of the crucial parameters determining the electronic device performance. We apply the light-induced transient grating technique to measure independently the carrier diffusion coefficient and lifetime, and to reveal the impact of additives on carrier transport properties in wet-cast CH3NH3PbI3 (MAPbI(3)) perovskite films. We use the high excitation regime, where diffusion length of carriers is controlled purely by carrier diffusion and not by the lifetime. We demonstrate a four-fold increase in diffusion coefficient due to the reduction of localization center density by additives; however, the density dependence analysis shows the dominance of localization-limited diffusion regime. The presented approach allows us to estimate the limits of technological improvement carrier diffusion coefficient in wet-cast layers can be expected to be enhanced by up to one order of magnitude.
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