Effect of Annealing Temperature of Magnesium Doped Zinc Oxide Nanorods Growth on Silicon Substrate

Magnesium (Mg)-doped zinc oxides (ZnO) have been prepared on a silicon substrate by using the solution-immersion method. The nanorods films were annealed at different temperature 0 degrees C, 250 degrees C, 500 degrees C respectively for 1 hour. The XRD diffraction indicated that the Mg-doped ZnO nanorods have good crystallinity with a hexagonal wurzite structure preferentially oriented along the (002) direction. PL spectroscopy at room temperature shows strong UV peaks appearing at 383 nm when annealed at 250 degrees C. The intensity of broad emission peaks increases with increasing annealing temperature to 500 degrees C which is possibility attributed to intrinsic defects.