Journal
JOURNAL OF NANOPHOTONICS
Volume 12, Issue 4, Pages -Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.JNP.12.043508
Keywords
UV semiconductors; III-nitrides; photonic devices; nanostructures; nanophotonics
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Funding
- King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid-State Lighting [KACST TIC R2-FP-008]
- KAUST [BAS/1/1614-01-01]
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Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License.
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