Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 29, Issue 14, Pages 12076-12088Publisher
SPRINGER
DOI: 10.1007/s10854-018-9314-7
Keywords
-
Categories
Funding
- ASEAN-India Research & Training Fellowship [IMRC/AISTDF/RD/P-1/2017]
- Institute of Research Management and Innovation (IRMI) of UiTM
- Ministry of Higher Education of Malaysia
Ask authors/readers for more resources
Tin (Sn)-doped zinc oxide (ZnO) nanorod arrays (TZO) were synthesized onto aluminum-doped ZnO-coated glass substrate via a facile sonicated sol-gel immersion method for humidity sensor applications. These nanorod arrays were grown at different Sn concentrations ranging from 0.6 to 3 at.%. X-ray diffraction patterns showed that the deposited TZO arrays exhibited a wurtzite structure. The stress/strain condition of the ZnO film metamorphosed from tensile strain/compressive stress to compressive strain/tensile stress when the Sn concentrations increased. Results indicated that 1 at.% Sn doping of TZO, which has the lowest tensile stress of 0.14 GPa, generated the highest conductivity of 1.31 S cm(-1). In addition, 1 at.% Sn doping of TZO possessed superior sensitivity to a humidity of 3.36. These results revealed that the optimum performance of a humidity-sensing device can be obtained mainly by controlling the amount of extrinsic element in a ZnO film.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available