Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 29, Issue 9, Pages 7213-7219Publisher
SPRINGER
DOI: 10.1007/s10854-018-8709-9
Keywords
-
Categories
Funding
- Key Laboratory of Luminescence and Optical Information of China in Beijing Jiaotong University from the National Natural Science Foundation of China [60977017, 61275058]
- Fundamental Research Funds for the Central Universities [2013JBM101]
- Beijing Jiaotong University Foundation [S16PD00220]
Ask authors/readers for more resources
Rare earth (RE) -doped ZnO electroluminescence is worthy of investigation for phosphor-free white light-emitting diodes (LEDs) due to their pure and sharp emissions. Whereas, the low solubility of RE ions in ZnO films is found to hinder the performance of RE-doped ZnO devices. Herein, ZnO:Eu and ZnO:Eu/Tb LEDs were synthesized and the electroluminescence properties were tested. The results show that the emission intensity of ZnO: Eu/Tb LED is 8 times higher than that of ZnO: Eu LED while the input power is smaller when the concentration of terbium is proper. Furthermore, we discussed the excitation mechanism and found that the ratio of the EL intensity of the D-5(1) -> F-7(1) to D-5(0) -> F-7(J (J=0 - 4)) transition increases with increasing Tb doping concentration, which may indicate the possibility of energy transfer from Tb3+ to Eu3+. The results are believed to be an effective strategy to improve the electroluminescence of RE-doped semiconductor for white LEDs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available