Journal
JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 36, Issue 13, Pages 2572-2581Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2018.2811388
Keywords
Infrared photodetector; quantum dots-in-a-well; silicon substrate
Funding
- Shanghai Sailing Program [17YF1429300]
- ShanghaiTech University [F-0203-16-002]
- UK EPSRC First Grant [EP/R006172/1]
- National Science Foundation under Grant EPSCoR [OIA-1457888]
- EPSRC [EP/R006172/1, EP/P006973/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/R006172/1] Funding Source: researchfish
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In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of 2.03 x 10(-3) mA/cm(2) was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 mu m at 77K, and the corresponding detectivity was 5.78 x 10(8) cm.Hz(1/2)/W. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.
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