Journal
JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 36, Issue 2, Pages 219-224Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2017.2752211
Keywords
Quantum dot laser; semiconductor laser; silicon photonics
Funding
- Strategic Information and Communications R&D Promotion Program (SCOPE) of the Ministry of Internal Affairs, Japan [142102003]
- National Institute of Information and Communications Technology, Japan
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We propose a tunable dual-wavelength heterogeneous quantum dot laser diode. The tunable dual-wavelength laser consists of a quantum dot semiconductor optical amplifier as the optical gain medium and an external cavity fabricated from silicon photonics technology as the wavelength tunable filter. We successfully demonstrated dual-wavelength lasing oscillation by tuning the difference frequency from approximately 34 to 400 GHz.
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