Journal
EIGHTH CHINA NATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND APPLICATIONS
Volume 873, Issue -, Pages 799-808Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/AMR.873.799
Keywords
Quantum dot; Ge/Si quantum dot; Quantum dot infrared photodetector
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The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QUI) in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.
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