Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 47, Issue 10, Pages 5699-5704Publisher
SPRINGER
DOI: 10.1007/s11664-018-6431-2
Keywords
Mercury cadmium telluride; HgCdTe; magnetotransport; multi-carrier fitting; low doping; Fourier-domain mobility spectrum analysis
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Funding
- National Science Foundation Major Research Instrumentation Award [DMR-1428226]
- Air Force Office of Scientific Research [FA9550-15-1-0247, FA9550-15-1-0377]
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Mercury cadmium telluride (HgCdTe, or MCT) with low n-type indium doping concentration offers a means for obtaining high performance infrared detectors. Characterizing carrier transport in materials with ultra low doping (N-D = 10(14) cm(-3) and lower), and multi-layer material structures designed for infrared detector devices, is particularly challenging using traditional methods. In this work, Hall effect measurements with a swept B-field were used in conjunction with a multi-carrier fitting procedure and Fourier-domain mobility spectrum analysis to analyze multi-layered MCT samples. Low temperature measurements (77 K) were able to identify multiple carrier species, including an epitaxial layer (x = 0.2195) with n-type carrier concentration of n = 1 x 10(14) cm(-3) and electron mobility of mu = 280000 cm(2)/Vs. The extracted electron mobility matches or exceeds prior empirical models for MCT, illustrating the outstanding material quality achievable using current epitaxial growth methods, and motivating further study to revisit previously published material parameters for MCT carrier transport. The high material quality is further demonstrated via observation of the quantum Hall effect at low temperature (5 K and below).
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