Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 47, Issue 9, Pages 5039-5044Publisher
SPRINGER
DOI: 10.1007/s11664-018-6299-1
Keywords
Silicon; oxygen precipitate; recombination activity; iron contamination; hydrogen passivation
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Funding
- National Natural Science Foundation of China [51532007, 51602085, 61574124, 61422404, 61721005]
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Oxygen precipitates (OPs) are unavoidably formed in Czochralski silicon (CZ-Si) containing relatively high concentrations of oxygen. The recombination behavior of such defects is also vital for bulk devices like solar cells as they can reduce the minority carrier lifetime and degrade the cell performance. In our experiments, the characteristics of oxygen precipitation in n-type CZ-Si are systematically investigated by means of Fourier transform infrared spectroscopy (FTIR), deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). It is found that the iron contamination in n-type CZ-Si can strongly influence the OPs generation and their electrical properties, whereas the hydrogen passivation can effectively reduce the recombination activity of OPs.
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