Journal
JOURNAL OF CRYSTAL GROWTH
Volume 485, Issue -, Pages 78-85Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2018.01.001
Keywords
Computational thermodynamics; Growth model; High temperature chemical vapor deposition; Silicon carbide; Methyltrichlorosilane; Tetramethylsilane
Funding
- Strategic Core Materials Technology Development Program - Ministry of Trade, Industry and Energy (MOTIE), Korea [10062272]
- Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning (MSIP) [2012M3A7B4049888]
- Priority Research Center Program through NRF - Ministry of Education (MOE) [2010-0020207]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10062272] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, we thermodynamically reviewed the suitable growth process conditions of alpha-SiC in the Si-C-H system using tetramethylsilane (TMS) and in the Si-C-H-Cl system using methyltrichlorosilane (MTS). In the Si-C-H-Cl system, pure solid SiC was obtained at high temperatures under a larger range of hydrogen dilution ratios than that tolerated in the Si-C-H system. X-ray diffraction and micro-Raman analysis of the products obtained at 1900, 2000, and 2100 degrees C showed that the alpha-SiC becomes more dominant with increasing temperature in the Si-C-H-Cl system. While TMS was unsuitable for high temperature processing due to its high C/Si ratio, MTS was found to be appropriate for growing alpha-SiC crystals at high temperatures under a range of conditions. These results indicate that a novel method to grow alpha-SiC single crystals through HTCVD using MTS as a precursor could be established. (C) 2018 Elsevier B.V. All rights reserved.
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