Nonenzymatic flexible field-effect transistor based glucose sensor fabricated using NiO quantum dots modified ZnO nanorods

Herein, we fabricated nonenzymatic flexible field-effect transistor (f-FET) based glucose sensor using nickel oxide quantum dots (NiO QDs) modified zinc oxide nanorods (ZnO NRs). The ZnO NRs surfaces were coated with NiO QDs using radio frequency (RF) magnetron sputtering to enhance the electrocatalytic feature and the surface area of ZnO NRs. Under physiological conditions (pH 7.4), the nonenzymatic f-FET glucose sensor shows two linear ranges of 0.001-10 mM and 10-50 mM with the high sensitivity of 13.14 mu A cm(-2) mM(-1) and 7.31 pA cm(-2) mM(-1), respectively, along with good selectivity, stability and repeatability during glucose detection. The examination of human whole blood and serum samples reveal that the nonenzymatic f-FET based glucose sensor is capable of measuring glucose concentration efficiently in the presence of interfering species and thus can be offered as a promising device for further applications in clinical and non-clinical fields. (C) 2017 Elsevier Inc. All rights reserved.