Related references
Note: Only part of the references are listed.Plasticity and optical properties of GaN under highly localized nanoindentation stress fields
P. G. Caldas et al.
JOURNAL OF APPLIED PHYSICS (2017)
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
Meng Qi et al.
APPLIED PHYSICS LETTERS (2015)
Extraction of plasticity parameters of GaN with high temperature, in situ micro-compression
J. M. Wheeler et al.
INTERNATIONAL JOURNAL OF PLASTICITY (2013)
Dislocation Energetics and Pop-Ins in AlN Thin Films by Berkovich Nanoindentation
Sheng-Rui Jian et al.
MATERIALS (2013)
Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation
Yuki Tokumoto et al.
JOURNAL OF APPLIED PHYSICS (2012)
Thermally activated pop-in and indentation size effects in GaN films
Jun-Yong Lu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2012)
Dislocation cross-slip in GaN single crystals under nanoindentation
J. Huang et al.
APPLIED PHYSICS LETTERS (2011)
Size Effects and Stochastic Behavior of Nanoindentation Pop In
J. R. Morris et al.
PHYSICAL REVIEW LETTERS (2011)
Mechanical response of GaN film and micropillar under nanoindentation and microcompression
T. H. Sung et al.
APPLIED PHYSICS LETTERS (2010)
Elastic-plastic transition during nanoindentation in bulk GaN crystal
Masaki Fujikane et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2008)
Accurate experimental determination of the Poisson's ratio of GaN using high-resolution x-ray diffraction
M. A. Moram et al.
JOURNAL OF APPLIED PHYSICS (2007)
Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films
Chi-Hui Chien et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
'Pop-in' phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates
R. Navamathavan et al.
MATERIALS CHEMISTRY AND PHYSICS (2006)
Role of inclined threading dislocations in stress relaxation in mismatched layers
P Cantu et al.
JOURNAL OF APPLIED PHYSICS (2005)
Dependence of leakage current on dislocations in GaN-based light-emitting diodes
DS Li et al.
JOURNAL OF APPLIED PHYSICS (2004)
Analysis of physical properties of III-nitride thin films by nanoindentation
SR Jian et al.
JOURNAL OF ELECTRONIC MATERIALS (2003)
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
D Lorenz et al.
PHYSICAL REVIEW B (2003)
Nanoindentation of Si, GaP, GaAs and ZnSe single crystals
SE Grillo et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2003)
Properties of strained wurtzite GaN and AlN:: Ab initio studies -: art. no. 115202
JM Wagner et al.
PHYSICAL REVIEW B (2002)
Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope
M Albrecht et al.
JOURNAL OF APPLIED PHYSICS (2002)
Indentation-induced damage in GaN epilayers
JE Bradby et al.
APPLIED PHYSICS LETTERS (2002)
Mechanical deformation of InP and GaAs by spherical indentation
JE Bradby et al.
APPLIED PHYSICS LETTERS (2001)
Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
JL Weyher et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
Nanoindentation of epitaxial GaN films
SO Kucheyev et al.
APPLIED PHYSICS LETTERS (2000)