Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 1, Pages 929-934Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am507478q
Keywords
diameter modulation; dielectrophorestic alignment; field effect transistor; silicon nanowires; transfer method
Funding
- WCU program through the National Research Foundation of Korea - Ministry of Education, Science and Technology [R32-20031]
- LG Display academic industrial cooperation program
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The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NWs diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm(2)/V.s and the threshold voltage moved from -7.17 to 0 V because phononelectron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.
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