Journal
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013
Volume 1583, Issue -, Pages 217-220Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4865639
Keywords
ferromagnetic; semiconductors; co-doping; spintronics; first principles calculation
Funding
- Global Center of Excellence
- Ministry of Education, Culture, Sports, Science and Technology
- Advanced Low Carbon Technology Research
- Development Program of the Japan Science and Technology Agency
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Based on experimental results, using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method and Monte Carlo simulation, we study the mechanism of ferromagnetic behavior of (In, Fe) As. We show that with doped Be atoms occupying in interstitial sites, chemical pair interactions between atoms and magnetic exchange interactions between Fe atoms change due to electron concentration. Therefore, by controlling the doping process, magnetic behavior of (In, Fe) As is controlled and ferromagnetism is observed in this semiconductor.
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