Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 740, Issue -, Pages 477-484Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.12.038
Keywords
Phase change characteristics; Microstructure; Band gap; Complex cross bond system
Categories
Funding
- National Natural Science Foundation of China [61675107, 61306147]
- Science and Technology Public Project of Zhejiang Province [2016C31077]
- Open Fund of State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Micros-system and Information Technology
- K.C. Wong Magna Fund in Ningbo University
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Composition dependence of structural, electrical and optical properties of binary Selenium-Antimony films was investigated for electrical and optical nonvolatile memories with low power and high speed. For preferred Sb51Se49 and Sb47Se53 films, the temperature for 10-year data retention can be up to 125.9 and 141.8 degrees C. Both amorphous and crystalline resistivities increase with Se content. The resistance ratio between two states maintain almost 3 orders of magnitude. Hall mobility and carrier concentration increases with the decrease in Se content. The microstructure of annealed Sb-Se films exhibits uniform distribution of crystallized phases with orthorhombic Sb2Se3 and hexagonal Sb. The high ON/OFF ratios of both refractive index (n) and extinction coefficient (k) between the amorphous and crystalline states alloys Sb-Se film to be favorable for the optical storage in spectral region 1.7-25 mu m. (C) 2017 Elsevier B.V. All rights reserved.
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