Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 744, Issue -, Pages 679-682Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.02.151
Keywords
Ge-rich SiGe-on-insulator; Continuous-wave diode laser; Recrystallization; Magnetron sputtering
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Funding
- Australian Government through the Australian Research Council (ARC) [DP160103433]
- Australian Renewable Energy Agency [ARENA 1-UFA002]
- Epistar Corporation
- Shin Shin Natural Gas Co., Ltd., Taiwan
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We develop a cost-effective, up-scalable and high-throughput method to fabricate low-defect Ge-rich SiGe-on-insulator (SGOI) through continuous-wave diode laser-induced recrystallization of sputtered Ge on Silicone-on-insulator (SOI). The successful formation of Ge-rich SGOI is revealed by Raman spectra and energy-dispersive X-ray spectroscopy mapping. Transmission electron microscopy measurements show that the fabricated SGOI has much lower dislocation density than the initial Ge film which may be attributed to two effects: i) laser-induced lateral recrystallization changing the mechanism from SiGe/Si hetero-epitaxy to SiGe/SiGe homo-epitaxy, ii) the fast regrowth rate and high thermal gradient producing vacancy supersaturation causing the movement of dislocations to lateral surfaces. (C) 2018 Elsevier B.V. All rights reserved.
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