Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 745, Issue -, Pages 292-298Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.02.177
Keywords
SiO2/(AlxGa1-x)(2)O-3; HfO2/(AlxGa1-x)(2)O-3; Band alignment; Ga2O3 buffer layer; Interface
Categories
Funding
- National Natural Science Foundation of China [61774116, 61334002]
- 111 Project [B12026]
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We report the band alignment of SiO2 and HfO2 with (AlxGa1-x)(2)O-3 (0 < x < 0.53) film utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. (AlxGa1-x)(2)O-3 film were epitaxially grown on sapphire with Ga2O3 buffer layer. The crystal quality and orientation of (AlxGa1-x)(2)O-3 (0 <= x <= 0.53) samples were firstly studied with high-resolution X-ray diffraction (HRXRD). Ga 2p, Si 2p, Hf 4f and valence band spectra were used to determine the band alignment. As the Al mole fraction x increases from 0 to 0.53, conduction band alignments of SiO2/(AlxGa1-x)(2)O-3 and HfO2/(AlxGa1-x)(2)O-3 increase from 1.9 to 2.6 eV and from 1.1 to 2.0 eV, with the valence band alignment decrease from 1.9 to 0.6 eV and from -0.2 to -1.7 eV, respectively. From the results that wider bandgap with a larger conduction band alignment, reflects that Ga2O3 and (AlxGa1-x)(2)O-3 is a promising candidate for power devices. (C) 2018 Elsevier B.V. All rights reserved.
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